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M/A-COM Announces New 500 W GaN on SiC HEMT Pulsed Power Transistor
[Satellite TODAY 05-03-13] M/A-COM Technology Solutions has introduced a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications.
The new transistor provides 500W of output power with 19 dB of gain and 55 percent efficiency, and it also features high breakdown voltages, which allows for operation at 50 V under more extreme load mismatch conditions.
Operating between the 1200 MHz – 1400 MHz Frequency range, the MAGX-001214-500L00 boasts a mean time to failure (MTTF) of 5.3*106hours, and is available as both flanged and flangeless packaged devices.
“The device is an ideal candidate for customers looking to upgrade L-Band radar systems to the next level of pulsed power performance and experience the solid reliability that is offered by M/A-COM’s GaN Power Solutions,” Paul Beasly, product manager, M/A-COM said in a statement.
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