Worlfspeed’s CMPA801B025F MMIC. Photo: Wolfspeed.

[Via Satellite 04-14-2016] Wolfspeed, a Cree company, has completed testing of its Gallium Nitride on Silicon Carbide (GaN-on-SiC) Radio Frequency (RF) power transistors to demonstrate compliance with NASA reliability standards for satellite and space systems. With partner KCB Solutions, Wolfspeed conducted a comprehensive testing program to demonstrate that the devices meet NASA EEE-INST-002 Level 1 reliability and performance standards, derived from the MIL-STD requirements for Class S and Class K qualifications.

KCB Solutions conducted five test procedures on Wolfspeed’s 25W GaN-on-SiC HEMTCGH40025F and their 25W 2-Stage X-band GaN Monolithic Microwave Integrated Circuits (MMIC) CMPA801B025F devices, which Wolfspeed manufactures using its 0.4µm G28V3 fabrication process. Both devices demonstrated no significant RF performance change after undergoing all the test procedures, including exposure to a cumulative dose of radiation exceeding 1Mrad, according to the company.

“This successful testing demonstrates that Wolfspeed’s GaN foundry process is capable of producing devices that meet these demanding reliability standards. Our customers now have the ability to specify our GaN RF devices in the most critical aerospace, military, and satellite electronics systems,” said Jim Milligan, RF and microwave director, Wolfspeed. “Our proven GaN-on-SiC technology enables design engineers to make smaller, lighter, more efficient, and more reliable solid-state power amplifiers than are possible with conventional Traveling Wave Tube Amplifiers (TWTAs) or those designed with Gallium Arsenide (GaAs) devices.”