MAGX-001214-650L00 L-band radar transistor. Photo: Macom

[Via Satellite 08-7-2014] Macom Technology Solutions has released MAGX-001214-650L00; a gold-metalized pre-matched Gallium Nitride (GaN) on Silicon Carbide (SiC) transistor designed for pulsed radar applications.

Assembled in a high-performance ceramic flange package, the MAGX-001214-650L00 supports up to 650 W of peak power with a typical 19.5 dB of gain and 60 percent efficiency. Furthermore, the device continues to provide stable operation at 50 V under more extreme load mismatch conditions. The transistor operates between the 1200 MHz and 1400 MHz frequency range.

“The device is an ideal candidate for customers looking to combine two power transistors and realize over 1,000 W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints,” said Paul Beasly, product manager, Macom.