The ALP275 InP HEMT Low Noise Amplifier. Photo: Northrop Grumman

[Via Satellite 06-02-2014] Northrop Grumman released two high performance Monolithic Microwave Integrated Circuit (MMIC) broadband Ultra-Low-Noise Amplifiers (LNAs) in production for immediate delivery. The LNAs are indium phosphide (InP) High Electron Mobility Transistors (HEMT), for E-band and W-band commercial, civil and military applications.

The LNAs are targeted for functions such as communication links, sensors, millimeter-wave imaging, radars and digital microwave radios. The compact design aims to reduce footprint size while enhancing ultra-low-noise performance and high gain. Both LNAs are fully passivated to maintain operation in rugged environments.

“The LNAs are the initial release of products designed for the company’s indium phosphide process, a powerful semiconductor technology that has successfully been used in Northrop Grumman’s advanced military communications systems,” said Frank Kropschot, general manager of microelectronics products and services at Northrop Grumman.