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[Satellite TODAY 04-27-12] Nitronex, an RF solutions developer for high-performance applications in the defense, communications, cable TV, industrial and scientific markets, has been awarded a Phase 1 SBIR contract from the U.S. government to develop a 20-Watt X-band GaN power amplifier that will be used in long-range RF telecommunications, the company announced April 26.
This is the third X- or Ka-Band contract awarded to Nitronex for its GaN-on-Si power amplifier technology. Nitronex has won 16 government contract awards that have funded the development of materials, devices, discretes, MMICs and process technologies, as well as manufacturing maturation.
“GaN-on-Si has inherent performance, reliability, manufacturing and cost advantages, especially when used for MMICs, which have large die sizes. We believe GaN-on-Si is an enabling technology for high-performance, high-reliability and cost-effective MMIC products,” Nitronex Vice President of Engineering Ray Crampton said in a statement.
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